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DDR4 Memory

Improve performance up to 50% (compared to DDR3.) with Advantech! We offer industrial grade DDR4 2666/2400/2133 memory with 30μ" gold plating connector (288 pin), featuring 1.2v low operating voltage and faster burst accesses. With rigorous reliability, vibration tests and -40 ~ 85℃ (-40 ~ 185℉) wide operating temperature range, our certified DIMMs are fully suitable for enterprise, embedded, automotive, data centers, and networking applications.

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34 total products

Part Number Description Memory
    Capacity Chip Manufacturer Chip Organization Feature Manufacturer Operating Temperature PCB Height
Part Number Description Memory
    Capacity Chip Manufacturer Chip Organization Feature Manufacturer Operating Temperature PCB Height
96D4-16G2400ER-ATL 16G DDR4 2400 288Pin 2GX4 Registered VLP 1.2V Samsung Chip 16 GB SAMSUNG 2G x 4 Registered ATP 0 ~ 95°C (32 ~ 203°F) 0.74"
96D4-16G2666ER-MI Micron 16G DDR4 2666 288Pin 1GX8 Registered 1.2V 16 GB MICRON 1 G x 8 Registered Micron 0 ~ 85°C (32 ~ 185°F) 1.23"
96D4-32G2400ER-AT 32G DDR4 2400 288Pin 2GX4 Registered 1.2V Samsung Chip 32 GB SAMSUNG 2 G x 4 Registered ATP 0 ~ 70°C (32 ~ 158°F) 1.23"
96D4-32G2666ER-AT 32GB DDR4 2666 288Pin 2GX4 Registered ECC 1.2V Samsung Chip 32 GB SAMSUNG 2G x 4 Registered ATP 0 ~ 85°C (32 ~ 185°F) 1.23"
96D4-32G2666ER-MI Micron 32G DDR4 2666 288Pin 2GX4 Registered 1.2V 32 GB MICRON 2 G x 4 Registered Micron 0 ~ 85°C (32 ~ 185°F) 1.23"
96D4-8G2400ER-ATL 8G DDR4 2400 288Pin 1GX8 Registered VLP 1.2V Samsung Chip 8 GB SAMSUNG 1G X 8 Registered ATP 0 ~ 95°C (32 ~ 203°F) 0.74"
96D4-8G2666ER-MI Micron 8G DDR4 2666 288Pin 1GX8 Registered 1.2V 8 GB MICRON 1G X 8 Registered Micron 0 ~ 85°C (32 ~ 185°F) 1.23"
96D4I-16G2400R-ATL 16G DDR4 2400 288Pin 2GX4 Registered VLP 1.2V -40~85℃ Samsung Chip 16 GB SAMSUNG 2G x 4 Registered ATP -40 ~ 85°C (-40 ~ 185°F) 0.74"
96D4I-4G2400R-ATL 4G DDR4 2400 288Pin 512MBX8 Registered VLP 1.2V -40~85℃ Samsung Chip 4 GB SAMSUNG 512 M x 8 Registered ATP -40 ~ 85°C (-40 ~ 185°F) 0.74"
96D4I-8G2400R-ATL 8G DDR4 2400 288Pin 1GX8 Registered VLP 1.2V -40~85℃ Samsung Chip 8 GB SAMSUNG 1G X 8 Registered ATP -40 ~ 85°C (-40 ~ 185°F) 0.74"
AQD-D4U16E24-HE Advantech 16G DDR4-2400 288Pin 1GX8 1.2V ECC Hynix Chip 16 GB HYNIX 1G X 8 ECC Advantech 0 ~ 85°C (32 ~ 185°F) 1.23"
AQD-D4U16E24-SE Advantech 16G DDR4-2400 288Pin 1GX8 1.2V ECC Samsung Chip 16 GB SAMSUNG 1G X 8 ECC Advantech 0 ~ 85°C (32 ~ 185°F) 1.23"
AQD-D4U16N24-HE Advantech 16G DDR4-2400 288Pin 1GX8 1.2V Unbuffered Hynix Chip 16 GB HYNIX 1G X 8 Unbuffered Advantech 0 ~ 85°C (32 ~ 185°F) 1.23"
AQD-D4U16N24-SE Advantech 16G DDR4-2400 288Pin 1GX8 1.2V Unbuffered Samsung Chip 16 GB SAMSUNG 1G X 8 Unbuffered Advantech 0 ~ 85°C (32 ~ 185°F) 1.23"
AQD-D4U16N26-SE Advantech 16G DDR4-2666 1GX8 1.2V Samsung IC 16 GB SAMSUNG 1 G x 8 Unbuffered Advantech 0 ~ 85°C (32 ~ 185°F) 1.18"
AQD-D4U16R21-SE Advantech 16G DDR4-2133 288Pin 1GX8 1.2V Registered Samsung Chip 16 GB SAMSUNG 1G X 8 Registered Advantech 0 ~ 85°C (32 ~ 185°F) 1.18"
AQD-D4U16R24-HE Advantech 16G DDR4-2400 288Pin 1GX8 1.2V Registered Hynix Chip 16 GB HYNIX 1G X 8 Registered Advantech 0 ~ 85°C (32 ~ 185°F) 1.23"
AQD-D4U16R24-SE Advantech 16G DDR4 2400 288Pin 1GX8 1.2V Registered Samsung Chip 16 GB SAMSUNG 1G X 8 Registered Advantech 0 ~ 85°C (32 ~ 185°F) 1.23"
AQD-D4U4GE24-HG Advantech 4G DDR4-2400 288Pin 512MX8 1.2V ECC Hynix Chip 4 GB HYNIX 512M X 8 ECC Advantech 0 ~ 85°C (32 ~ 185°F) 1.23"
AQD-D4U4GE24-SG Advantech 4G DDR4-2400 288Pin 512MX8 1.2V ECC Samsung Chip 4 GB SAMSUNG 512M X 8 ECC Advantech 0 ~ 85°C (32 ~ 185°F) 1.23"
AQD-D4U4GN24-HP Advantech 4G DDR4-2400 288Pin 512X16 1.2V Unbuffered Hynix Chip 4 GB HYNIX 512M x 16 Unbuffered Advantech 0 ~ 85°C (32 ~ 185°F) 1.23"
AQD-D4U4GN24-SG Advantech 4G DDR4-2400 288Pin 512X8 1.2V Unbuffered Samsung Chip 4 GB SAMSUNG 512M X 8 Unbuffered Advantech 0 ~ 85°C (32 ~ 185°F) 1.23"
AQD-D4U4GN26-SG Advantech 4G DDR4-2666 512X8 1.2V Samsung IC 4 GB SAMSUNG 512 M x 8 Unbuffered Advantech 0 ~ 85°C (32 ~ 185°F) 1.18"
AQD-D4U4GR21-SG Advantech 4G DDR4-2133 288Pin 512MX8 1.2V Registered Samsung Chip 4 GB SAMSUNG 512M X 8 Registered Advantech 0 ~ 85°C (32 ~ 185°F) 1.18"
AQD-D4U4GR24-HG Advantech 4G DDR4-2400 288Pin 512X8 1.2V Registered Hynix Chip 4 GB HYNIX 512M X 8 Registered Advantech 0 ~ 85°C (32 ~ 185°F) 1.23"
AQD-D4U4GR24-SG Advantech 4G DDR4 2400 288Pin 512MBX8 1.2V Registered Samsung Chip 4 GB SAMSUNG 512M X 8 Registered Advantech 0 ~ 85°C (32 ~ 185°F) 1.23"
AQD-D4U8GE24-HE Advantech 8G DDR4-2400 288Pin 1GX8 1.2V ECC Hynix Chip 8 GB HYNIX 1G X 8 ECC Advantech 0 ~ 85°C (32 ~ 185°F) 1.23"
AQD-D4U8GE24-SE Advantech 8G DDR4-2400 288Pin 1GX8 1.2V ECC Samsung Chip 8 GB SAMSUNG 1G X 8 ECC Advantech 0 ~ 85°C (32 ~ 185°F) 1.23"
AQD-D4U8GN24-HE Advantech 8G DDR4-2400 288Pin 1GX8 1.2V Unbuffered Hynix Chip 8 GB HYNIX 1G X 8 Unbuffered Advantech 0 ~ 85°C (32 ~ 185°F) 1.23"
AQD-D4U8GN24-SE Advantech 8G DDR4-2400 288Pin 1GX8 1.2V Unbuffered Samsung Chip 8 GB SAMSUNG 1G X 8 Unbuffered Advantech 0 ~ 85°C (32 ~ 185°F) 1.23"
AQD-D4U8GN26-SE Advantech 8G DDR4-2666 1GX8 1.2V Samsung IC 8 GB SAMSUNG 1 G x 8 Unbuffered Advantech 0 ~ 85°C (32 ~ 185°F) 1.18"
AQD-D4U8GR21-SG Advantech 8G DDR4-2133 288Pin 512MX8 1.2V Registered Samsung Chip 8 GB SAMSUNG 512M X 8 Registered Advantech 0 ~ 85°C (32 ~ 185°F) 1.18"
AQD-D4U8GR24-HE Advantech 8G DDR4-2400 288Pin 1GX8 1.2V Registered Hynix Chip 8 GB HYNIX 1G X 8 Registered Advantech 0 ~ 85°C (32 ~ 185°F) 1.23"
AQD-D4U8GR24-SE Advantech 8G DDR4-2400 288Pin 1GX8 1.2V Registered Samsung Chip 8 GB SAMSUNG 1G X 8 Registered Advantech 0 ~ 85°C (32 ~ 185°F) 1.23"

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