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AQD-D4U8GN26-SE
Advantech 8G DDR4-2666 1GX8 1.2V Samsung IC

  • DDR4 2666Mhz Unbuffered UDIMM
  • 30μ" gold plating thickness
  • 1.2V power consumption
  • 100% tested for stability, compatibility and performance
  • Samsung original chip

Product Specifications Download Spec

  • Part Number
  • Details
Memory
  • Manufacturer
  • Capacity
  • Chip Manufacturer
  • Chip Organization
  • Rank
  • Interface
  • Frequency
  • Voltage
  • PCB Height
  • Feature
  • Operating Temperature

Memory

  • Manufacturer

    AQD-D4U8GN26-SE Advantech
  • Capacity

    AQD-D4U8GN26-SE 8 GB
  • Chip Manufacturer

    AQD-D4U8GN26-SE SAMSUNG
  • Chip Organization

    AQD-D4U8GN26-SE 1 G x 8
  • Rank

    AQD-D4U8GN26-SE 1 Rank
  • Interface

    AQD-D4U8GN26-SE 288 pin
  • Frequency

    AQD-D4U8GN26-SE 2666 Mhz
  • Voltage

    AQD-D4U8GN26-SE 1.2 V
  • PCB Height

    AQD-D4U8GN26-SE 1.18"
  • Feature

    AQD-D4U8GN26-SE Unbuffered
  • Operating Temperature

    AQD-D4U8GN26-SE 0 ~ 85°C (32 ~ 185°F)

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