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DDR3 Memory

Deliver stable memory technology with Advantech! We offers DDR3 1866/1600/1333 memory with 30μ" gold plating connector (240 pin) featuring 1.35v/1.5v low operating voltage and better bandwidth. With rigorous reliability, vibration tests, and 0 ~ 95℃ (32 ~ 203℉) wide operating temperature range, our certified DIMM is suitable for edge computing, enterprise, embedded, automotive, data centers, and networking applications.

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18 total products

Part Number Description Memory
    Capacity Chip Manufacturer Chip Organization Feature Manufacturer Operating Temperature PCB Height
Part Number Description Memory
    Capacity Chip Manufacturer Chip Organization Feature Manufacturer Operating Temperature PCB Height
96D3-2G1333NN-AP1 (DEL18)2G DDR3-1333 240PIN 256X8 HYX(G) 2 GB HYNIX 256M X 8 Unbuffered Apacer 0 ~ 85°C (32 ~ 185°F) 1.18"
AQD-D31GN13-SX 1G DDR3-1333 128X8 1.5V SAM(G) 1 GB SAMSUNG 128M X 8 Unbuffered Advantech 0 ~ 85°C (32 ~ 185°F) 1.18"
AQD-D3L2GE16-SQ 2G ECC DDR3-1600 256X8 1.35V SAM 2 GB SAMSUNG 128M X 8 ECC Advantech 0 ~ 85°C (32 ~ 185°F) 1.18"
AQD-D3L2GN16-SQ 2G DDR3-1600 256X8 1.35V&1.5V SAM(G) 2 GB SAMSUNG 256M X 8 Unbuffered Advantech 0 ~ 85°C (32 ~ 185°F) 1.18"
AQD-D3L2GN16-SQ1 2G DDR3-1600 256X8 1.35V&1.5V SAM 2 GB SAMSUNG 256M X 8 Unbuffered Advantech 0 ~ 85°C (32 ~ 185°F) 1.18"
AQD-D3L4GE16-SG 4GB ECC-DDR3-1600 1.35V&1.5V 512X8 SAM 4 GB SAMSUNG 512M X 8 ECC Advantech 0 ~ 85°C (32 ~ 185°F) 1.18"
AQD-D3L4GN16-HG 4G DDR3-1600 512X8 1.35V HYX 4 GB HYNIX 512M X 8 Unbuffered Advantech 0 ~ 85°C (32 ~ 185°F) 1.18"
AQD-D3L4GN16-MG 4G DDR3-1600 512X8 1.35V MIC 4 GB MICRON 512M X 8 Unbuffered Advantech 0 ~ 85°C (32 ~ 185°F) 1.18"
AQD-D3L4GN16-SG 4G DDR3-1600 512X8 1.35V 1.5V SAM(G) 4 GB SAMSUNG 512M X 8 Unbuffered Advantech 0 ~ 85°C (32 ~ 185°F) 1.18"
AQD-D3L4GN16-SG1 4G DDR3-1600 512X8 1.35V & 1.5V SAM 4 GB SAMSUNG 512M X 8 Unbuffered Advantech 0 ~ 85°C (32 ~ 185°F) 1.18"
AQD-D3L4GN16-SQ 4G DDR3-1600 256X8 1.35V 1.5V SAM 4 GB SAMSUNG 256M X 8 Unbuffered Advantech 0 ~ 85°C (32 ~ 185°F) 1.18"
AQD-D3L4GR16-SG 4G R-DDR3-1600 1.35V 512X8 SAM 4 GB SAMSUNG 512M X 8 Registered Advantech 0 ~ 85°C (32 ~ 185°F) 1.18"
AQD-D3L8GE16-SG 8GB ECC-DDR3-1600 1.35V&1.5V 512X8 SAM 8 GB SAMSUNG 512M X 8 ECC Advantech 0 ~ 85°C (32 ~ 185°F) 1.18"
AQD-D3L8GN16-HG 8G DDR3-1600 512X8 1.35V HYX 8 GB HYNIX 512M X 8 Unbuffered Advantech 0 ~ 85°C (32 ~ 185°F) 1.18"
AQD-D3L8GN16-MG 8G DDR3-1600 512X8 1.35V MIC 8 GB MICRON 512M X 8 Unbuffered Advantech 0 ~ 85°C (32 ~ 185°F) 1.18"
AQD-D3L8GN16-SG 8G DDR3-1600 512X8 1.35V&1.5V SAM(G) 8 GB SAMSUNG 512M X 8 Unbuffered Advantech 0 ~ 85°C (32 ~ 185°F) 1.18"
AQD-D3L8GN16-SG1 8G DDR3-1600 512X8 1.35V 1.5V SAM 8 GB SAMSUNG 512M X 8 Unbuffered Advantech 0 ~ 85°C (32 ~ 185°F) 1.18"
AQD-D3L8GR16-SG 8G R-DDR3-1600 1.35V&1.5V 512X8 SAM 8 GB SAMSUNG 512M X 8 Registered Advantech 0 ~ 85°C (32 ~ 185°F) 1.18"

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