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DDR3 Memory

Deliver stable memory technology with Advantech! We offers DDR3 1866/1600/1333 memory with 30μ" gold plating connector (240 pin) featuring 1.35v/1.5v low operating voltage and better bandwidth. With rigorous reliability, vibration tests, and 0 ~ 95℃ (32 ~ 203℉) wide operating temperature range, our certified DIMM is suitable for edge computing, enterprise, embedded, automotive, data centers, and networking applications.

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18 total products

Part Number Description Memory
    Capacity Chip Manufacturer Chip Organization Feature Manufacturer Operating Temperature PCB Height
Part Number Description Memory
    Capacity Chip Manufacturer Chip Organization Feature Manufacturer Operating Temperature PCB Height
96D3-2G1333NN-AP1 2G DDR3-1333 240Pin 256MX8 Unbuffered Hynix Chip 2 GB HYNIX 256M X 8 Unbuffered Apacer 0 ~ 85°C (32 ~ 185°F) 1.18"
AQD-D31GN13-SX Advantech 1G DDR3-1333 240Pin 128MX8 1.35V Unbuffered Samsung Chip 1 GB SAMSUNG 128M X 8 Unbuffered Advantech 0 ~ 85°C (32 ~ 185°F) 1.18"
AQD-D3L2GE16-SQ Advantech 2G DDR3-1600 240Pin 256MX8 1.35V ECC Samsung Chip 2 GB SAMSUNG 128M X 8 ECC Advantech 0 ~ 85°C (32 ~ 185°F) 1.18"
AQD-D3L2GN16-SQ Advantech 2G DDR3-1600 240Pin 256MX8 1.35V Unbuffered Samsung Chip 2 GB SAMSUNG 256M X 8 Unbuffered Advantech 0 ~ 85°C (32 ~ 185°F) 1.18"
AQD-D3L2GN16-SQ1 Advantech 2G DDR3-1600 240Pin 256MX8 1.35V Unbuffered Samsung Chip 2 GB SAMSUNG 256M X 8 Unbuffered Advantech 0 ~ 85°C (32 ~ 185°F) 1.18"
AQD-D3L4GE16-SG Advantech 4G DDR3-1600 240Pin 512MX8 1.35V ECC Samsung Chip 4 GB SAMSUNG 512M X 8 ECC Advantech 0 ~ 85°C (32 ~ 185°F) 1.18"
AQD-D3L4GN16-HG Advantech 4G DDR3-1600 240Pin 512MX8 1.35V Unbuffered Hynix Chip 4 GB HYNIX 512M X 8 Unbuffered Advantech 0 ~ 85°C (32 ~ 185°F) 1.18"
AQD-D3L4GN16-MG Advantech 4G DDR3-1600 240Pin 512MX8 1.35V Unbuffered Micron Chip 4 GB MICRON 512M X 8 Unbuffered Advantech 0 ~ 85°C (32 ~ 185°F) 1.18"
AQD-D3L4GN16-SG Advantech 4G DDR3-1600 240Pin 512MX8 1.35V Unbuffered Samsung Chip 4 GB SAMSUNG 512M X 8 Unbuffered Advantech 0 ~ 85°C (32 ~ 185°F) 1.18"
AQD-D3L4GN16-SG1 Advantech 4G DDR3-1600 240Pin 512MX8 1.35V Unbuffered Samsung Chip 4 GB SAMSUNG 512M X 8 Unbuffered Advantech 0 ~ 85°C (32 ~ 185°F) 1.18"
AQD-D3L4GN16-SQ Advantech 4G DDR3-1600 240Pin 256MX8 1.35V Unbuffered Samsung Chip 4 GB SAMSUNG 256M X 8 Unbuffered Advantech 0 ~ 85°C (32 ~ 185°F) 1.18"
AQD-D3L4GR16-SG Advantech 4G DDR3-1600 240Pin 512MX8 1.35V ECC and Registered Samsung Chip 4 GB SAMSUNG 512M X 8 Registered Advantech 0 ~ 85°C (32 ~ 185°F) 1.18"
AQD-D3L8GE16-SG Advantech 8G DDR3-1600 240Pin 512MX8 1.35V ECC Samsung Chip 8 GB SAMSUNG 512M X 8 ECC Advantech 0 ~ 85°C (32 ~ 185°F) 1.18"
AQD-D3L8GN16-HG Advantech 8G DDR3-1600 240Pin 512MX8 1.35V Unbuffered Hynix Chip 8 GB HYNIX 512M X 8 Unbuffered Advantech 0 ~ 85°C (32 ~ 185°F) 1.18"
AQD-D3L8GN16-MG Advantech 8G DDR3-1600 240Pin 512MX8 1.35V Unbuffered Micron Chip 8 GB MICRON 512M X 8 Unbuffered Advantech 0 ~ 85°C (32 ~ 185°F) 1.18"
AQD-D3L8GN16-SG Advantech 8G DDR3-1600 240Pin 512MX8 1.35V Unbuffered Samsung Chip 8 GB SAMSUNG 512M X 8 Unbuffered Advantech 0 ~ 85°C (32 ~ 185°F) 1.18"
AQD-D3L8GN16-SG1 Advantech 8G DDR3-1600 240Pin 512MX8 1.35V Unbuffered Samsung Chip 8 GB SAMSUNG 512M X 8 Unbuffered Advantech 0 ~ 85°C (32 ~ 185°F) 1.18"
AQD-D3L8GR16-SG Advantech 8G DDR3-1600 240Pin 512MX8 1.35V Registered Samsung Chip 8 GB SAMSUNG 512M X 8 Registered Advantech 0 ~ 85°C (32 ~ 185°F) 1.18"

Product List