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SO-DIMM DDR3 Memory

Deliver stable memory technology with Advantech! We offer industrial grade SO-DDR3 1866/1600/1333 memory with 30μ" gold plating connector (204 pin) featuring increased power efficiency and bandwidth. With rigorous reliability, vibration tests and -40 ~ 85℃ (-40 ~ 185℉) wide operating temp. range, our certified SODIMM DDR3 is suitable for enterprise, embedded, and ultra thin mobile devices like micro-servers, and notebook applications.

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15 total products

Part Number Description Memory
    Capacity Chip Manufacturer Chip Organization Feature Manufacturer Operating Temperature PCB Height
Part Number Description Memory
    Capacity Chip Manufacturer Chip Organization Feature Manufacturer Operating Temperature PCB Height
AQD-SD31GN13-SX Advantech 1G SO-DDR3-1333 204Pin 128MX8 1.5V Unbuffered Samsung Chip 1 GB SAMSUNG 128M X 8 Unbuffered Advantech 0 ~ 85°C (32 ~ 185°F) 1.18"
AQD-SD3L1GN16-SC Advantech 1GB DDR3 1600 204Pin 128Mb x 16 Unffered SODIMM 1.35V 1 GB SAMSUNG 128M X 16 Unbuffered Advantech 0 ~ 85°C (32 ~ 185°F) 1.18"
AQD-SD3L2GN16-SQ Advantech 2G SO-DDR3-1600 204Pin 256MX8 1.35V Unbuffered Samsung Chip 2 GB SAMSUNG 256M X 8 Unbuffered Advantech 0 ~ 85°C (32 ~ 185°F) 1.18"
AQD-SD3L2GN16-SQ1 Advantech 2G SO-DDR3-1600 204Pin 256MX8 1.35V Unbuffered Samsung Chip 2 GB SAMSUNG 256M X 8 Unbuffered Advantech 0 ~ 85°C (32 ~ 185°F) 1.18"
AQD-SD3L4GE16-SG Advantech 4G SO-DDR3-1600 204Pin 512MX8 1.35V ECC Samsung Chip 4 GB SAMSUNG 512M X 8 ECC Advantech 0 ~ 85°C (32 ~ 185°F) 1.18"
AQD-SD3L4GN16-HG Advantech 4G SO-DDR3-1600 204Pin 512MX8 1.35V Unbuffered Hynix Chip 4 GB HYNIX 512M X 8 Unbuffered Advantech 0 ~ 85°C (32 ~ 185°F) 1.18"
AQD-SD3L4GN16-MG Advantech 4G SO-DDR3-1600 204Pin 512MX8 1.35V Unbuffered Micron Chip 4 GB MICRON 512M X 8 Unbuffered Advantech 0 ~ 85°C (32 ~ 185°F) 1.18"
AQD-SD3L4GN16-SG Advantech 4G SO-DDR3-1600 204Pin 512MX8 1.35V Unbuffered Samsung Chip 4 GB SAMSUNG 512M X 8 Unbuffered Advantech 0 ~ 85°C (32 ~ 185°F) 1.18"
AQD-SD3L4GN16-SG1 Advantech 4G SO-DDR3-1600 204Pin 512MX8 1.35V Unbuffered Samsung Chip 4 GB SAMSUNG 512M X 8 Unbuffered Advantech 0 ~ 85°C (32 ~ 185°F) 1.18"
AQD-SD3L4GN16-SQ Advantech 4G SO-DDR3-1600 204Pin 256X8 1.35V Unbuffered Samsung Chip 4 GB SAMSUNG 256M X 8 Unbuffered Advantech 0 ~ 85°C (32 ~ 185°F) 1.18"
AQD-SD3L8GE16-SG Advantech 8G SO-DDR3-1600 204Pin 512MX8 1.35V ECC Samsung Chip 8 GB SAMSUNG 512M X 8 ECC Advantech 0 ~ 85°C (32 ~ 185°F) 1.18"
AQD-SD3L8GN16-HG Advantech 8G SO-DDR3-1600 204Pin 512MX8 1.35V Unbuffered Hynix Chip 8 GB HYNIX 512M X 8 Unbuffered Advantech 0 ~ 85°C (32 ~ 185°F) 1.18"
AQD-SD3L8GN16-MG Advantech 8G SO-DDR3-1600 204Pin 512MX8 1.35V Unbuffered Micron Chip 8 GB MICRON 512M X 8 Unbuffered Advantech 0 ~ 85°C (32 ~ 185°F) 1.18"
AQD-SD3L8GN16-SG Advantech 8G SO-DDR3-1600 204Pin 512MX8 1.35V Unbuffered Samsung Chip 8 GB SAMSUNG 512M X 8 Unbuffered Advantech 0 ~ 85°C (32 ~ 185°F) 1.18"
AQD-SD3L8GN16-SG1 Advantech 8G SO-DDR3-1600 204Pin 512MX8 1.35V Unbuffered Samsung Chip 8 GB SAMSUNG 512M X 8 Unbuffered Advantech 0 ~ 85°C (32 ~ 185°F) 1.18"

Product List