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  1. Home /
  2. Certified Peripherals /
  3. DRAM Memory Module /
  4. DDR3 Memory /

DDR3 Memory

AQD-SD3L8GN16-SGW

8G SO-DDR3-1600 512X8 1.35V SAM -40~85C

  • 30u" Gold Plating Thickness
  • Anti-sulfurization resistance
  • Samsung original chip
  • Wide Temp. -40C to +85C
  • 100% tested for stability, compatibility and performance

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Datasheet
  • 8G SO-DDR3-1600 512X8 1.35V SAM -40~85C

Specifications

Memory
Manufacturer
  • Advantech
Capacity
  • 8 GB
Chip Manufacturer
  • SAMSUNG
Chip Organization
  • 512M X 8
Rank
  • 2 Rank
Interface
  • 204 pin
Frequency
  • 1600 Mhz
Voltage
  • 1.35 V
PCB Height
  • 1.18"
Feature
  • Unbuffered
Operating Temperature
  • -40 ~ 85°C (-40 ~ 185°F)

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